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| www.irf.com 1 automotive grade to-220ab full-pak AUIRFIZ44N gds gate drain source s d g absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? jc junction-to-case CCC 3.3 c/w r ? ja junction-to-ambient CCC 65 -55 to + 175 300 10 lbf in (1.1n m) 45 0.3 20 max. 3122 160 5.0 4.5 210 25 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ descriptionspecifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and rugge- dized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. features advanced planar technology low on-resistance isolated package high voltage isolation = 2.5kvrms sink to lead creepage distantce = 4.8mm 175c operating temperature fully avalanche rated lead-free, rohs compliant automotive qualified* v (br)dss 55v r ds(on) max. 24m ? i d 31a downloaded from: http:/// 2 www.irf.com ! "# $ % & '(&) * '(+,)-'./0 '( ? )1 '(2 "# 3 % i sd ? (2) ? 2/)& ? & ) * ? .(+, 4 ?? / ?? 5 '6)7'608 uses irfz44n data and test conditions. r ? is measured at tj at approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)ds s drain-to-source breakdown voltage 55 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.055 CCC v/c r ds (on) static drain-to-source on-resistance CCC CCC 24 m ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v gfs forward transconductance 17 CCC CCC s i dss drain-to-source leakage current CCC CCC 25 a CCC CCC 250 i gs s gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC CCC 65 q gs gate-to-source charge CCC CCC 12 nc q gd gate-to-drain ("miller") charge CCC CCC 27 t d(on) turn-on delay time CCC 7.3 CCC t r rise time CCC69CCC t d(off) turn-off delay time CCC 47 CCC ns t f fall time CCC 60 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 1300 CCC c os s output capacitance CCC 410 CCC pf c rs s reverse transfer capacitance CCC 510 CCC c drain to sink capacitance CCC 12 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 31 (body diode) a i sm pulsed source current CCC CCC 160 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 65 98 ns q rr reverse recovery charge CCC 160 240 nc t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by ls+ ld) ? = 1.0mhz, see fig. 5 v gs = 20v v gs = -20v mosfet s ymbol showing the integral reverse p-n junction diode. v ds = 25v, i d = 25a i d = 25a v ds = 44v conditions r d = 1.1 ? , see fig. 10 v gs = 0v t j = 25c, i s = 17a, v gs = 0v t j = 25c, i f = 25a di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 17a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c ? = 1.0mhz conditions v gs = 10v, see fig. 6&13 v dd = 28v i d = 25a r g = 12 ? v ds = 25v downloaded from: http:/// www.irf.com 3 !!" #$ $% $! qualification information ? to-220 fullpak n/a rohs compliant yes esd machine model class m2 (+/- 200v) ?? aec-q101-002 human body model class h1b (+/- 1000v) ?? aec-q101-001 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ?? aec-q101-005 moisture sensitivity level downloaded from: http:/// 4 www.irf.com &" '( )!*" *+ ( , *+ ( , *+ * , 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v a 4.5v 20 s pulse width t = 175c c 1 10 100 1000 4567891 0 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 25v 20 s pulse width ds t = 175c j 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 41a d * * downloaded from: http:/// www.irf.com 5 *+ - , $)! - . ) $ / 0" ". ( $1 *+ , )! . ) $ *+ . 2 ) $ 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 1 02 03 04 05 06 07 0 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v dsds i = 25a d 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10 s 100 s 1ms 10ms a t = 25c t = 175c single pulse cj downloaded from: http:/// 6 www.irf.com . $*"*, v ds 90%10% v gs t d(on) t r t d(off) t f . $*"3 %" & ???? ??????? & 9 : * & + - & / 0" "4%* * " " 56 , / 0" " , )! , *" 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:/// www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - 0 100 200 300 400 500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as i top 10a 18a bottom 25a a starting t , junction temperature (c) v = 25v d dd / 0" "1% 4$+ )! , - , $*, 7 " %*, 7 " %3 %" v ds l d.u.t. v dd i as t p 0.01 ? r g + - t p v ds i as v dd v (br)dss q g q gs q gd v g charge 89) : - , $3 %" downloaded from: http:/// 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 2&, #4;24*. < & '(&$!-! - 9 & ??? ! ! ??? 9 9 : * ??? 1 ! ! 9 3 !;9; ??? 9 : * <9 : * , - ! ,! ! ????? -!# 1 ???? =!4 ???? -!- > 1 , * $! < downloaded from: http:/// www.irf.com 9 to-220ab full-pak package outlinedimensions are shown in millimeters (inches) to-220ab full-pak part marking information , =>= 33>3?3? 1>1 "%5@ 2 & " @$ @, downloaded from: http:/// 10 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRFIZ44N to-220 fullpak tube 50 AUIRFIZ44N downloaded from: http:/// www.irf.com 11 unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir)reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir productsfor any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:/// |
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